Samsung is in no mood to enter into sleep mode despite the Coronavirus outbreak. The company has started mass production of the next-generation eUFS 3.1 storage chips for their upcoming flagship smartphones. According to company sources, the industry-first eUFS 3.1 storage has entered the mass production stage. The upcoming UFS 3.1 storage chip will be available in 128GB, 256GB and 512GB capacities respectively.
Going forward, you can expect the elimination of 64GB storage smartphone models. The upcoming eUFS 3.1 storage technology is capable of delivering three times write speed when compared with eUFS 3.0 storage. Moreover, eUFS 3.1 breaks the 1GB/s performance threshold in smartphone storage.
Commenting on the development, Cheol Choi, Executive Vice President of Memory Sales & Marketing at Samsung Electronics revealed that smartphone users will no longer have to worry about the various bottlenecks. Normally, customers face slow read/write speeds but UFS 3.1 is designed to deliver an enhanced writing speed. The demand for the smartphone will increase over the next two years and the launch of the eUFS 3.1 storage chip is a step in the right direction.
Samsung eUFS 3.1 boasts a sequential write speed of over 1200MB/s, which is twice the speed of a SATA-based PC.
The upcoming storage technology is also ten times the speed of a UHS-1 microSD card, which runs at 90MB/s. You will be able to store 8K videos and thousands of photos without any buffering. If you would like to transfer contents from your old phone to a new handset, then you only need to spend less time.
According to Samsung, smartphones with eUFS 3.1 technology will be able to move 100GB of data within 1.5 minutes. The eUFS 3.1 storage smartphones will be capable of processing up to 60 percent faster than the conventional UFS 3.0 variant.
The upcoming storage technology will offer 100,000 input/output operations per second for reading, while for writing it offers 70000 IOPS.
Samsung has started volume production of the storage chips at Xi’an, China to meet the growing demand. The company is also gearing up to shift its V-NAND volume production base at Pyeongtaek line (P1) in Korea from 5th generation to 6th generation V-NAND to address the growing demand.